| Manufacturer | |
| Mfr. Part # | STP100N10F7 |
| EBEE Part # | E82970027 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 80A 150W 6.8mΩ@10V,40A 2.5V@250uA 1 N-channel TO-220-3 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.3808 | $ 1.3808 |
| 10+ | $1.1120 | $ 11.1200 |
| 30+ | $0.9190 | $ 27.5700 |
| 100+ | $0.7506 | $ 75.0600 |
| 500+ | $0.6765 | $ 338.2500 |
| 1000+ | $0.6425 | $ 642.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STP100N10F7 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 8mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 150W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Current - Continuous Drain(Id) | 80A | |
| Ciss-Input Capacitance | 4.369nF | |
| Output Capacitance(Coss) | 823pF | |
| Gate Charge(Qg) | 61nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.3808 | $ 1.3808 |
| 10+ | $1.1120 | $ 11.1200 |
| 30+ | $0.9190 | $ 27.5700 |
| 100+ | $0.7506 | $ 75.0600 |
| 500+ | $0.6765 | $ 338.2500 |
| 1000+ | $0.6425 | $ 642.5000 |
