| Manufacturer | |
| Mfr. Part # | STI33N60M6 |
| EBEE Part # | E83288465 |
| Package | I2PAK(TO-262) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 600V 25A 125mΩ@10V,12.5A 190W 4V@250uA 1 N-channel I2PAK(TO-262) MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.0528 | $ 4.0528 |
| 200+ | $1.5686 | $ 313.7200 |
| 500+ | $1.5136 | $ 756.8000 |
| 1000+ | $1.4871 | $ 1487.1000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STI33N60M6 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 600V | |
| Continuous Drain Current (Id) | 25A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 125mΩ@10V,12.5A | |
| Power Dissipation (Pd) | 190W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.2pF@100V | |
| Input Capacitance (Ciss@Vds) | 1.515nF@100V | |
| Total Gate Charge (Qg@Vgs) | 33.4nC |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.0528 | $ 4.0528 |
| 200+ | $1.5686 | $ 313.7200 |
| 500+ | $1.5136 | $ 756.8000 |
| 1000+ | $1.4871 | $ 1487.1000 |
