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STMicroelectronics STI33N60M6


Manufacturer
Mfr. Part #
STI33N60M6
EBEE Part #
E83288465
Package
I2PAK(TO-262)
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
600V 25A 125mΩ@10V,12.5A 190W 4V@250uA 1 N-channel I2PAK(TO-262) MOSFETs ROHS
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$4.0528$ 4.0528
200+$1.5686$ 313.7200
500+$1.5136$ 756.8000
1000+$1.4871$ 1487.1000
TypeDescription
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CategoryDiscrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs
DatasheetST STI33N60M6
RoHS
Operating Temperature-55℃~+150℃
Type1 N-channel
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)25A
Drain Source On Resistance (RDS(on)@Vgs,Id)125mΩ@10V,12.5A
Power Dissipation (Pd)190W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Reverse Transfer Capacitance (Crss@Vds)4.2pF@100V
Input Capacitance (Ciss@Vds)1.515nF@100V
Total Gate Charge (Qg@Vgs)33.4nC

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