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STMicroelectronics STH80N10F7-2
| Manufacturer | |
| Mfr. Part # | STH80N10F7-2 |
| EBEE Part # | E8411894 |
| Package | H2PAK-2 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 80A 9.5mΩ@10V,40A 110W 4.5V@250uA 1 N-channel H2PAK-2 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.5603 | $ 1.5603 |
| 10+ | $1.3384 | $ 13.3840 |
| 30+ | $1.2159 | $ 36.4770 |
| 100+ | $1.0793 | $ 107.9300 |
| 500+ | $1.0189 | $ 509.4500 |
| 1000+ | $0.9905 | $ 990.5000 |
| 2000+ | $0.9798 | $ 1959.6000 |
| 4000+ | $0.9728 | $ 3891.2000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STH80N10F7-2 | |
| RoHS | ||
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 100V | |
| Continuous Drain Current (Id) | 80A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 9.5mΩ@10V,40A | |
| Power Dissipation (Pd) | 110W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4.5V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF@50V | |
| Input Capacitance (Ciss@Vds) | 3.1nF@50V |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.5603 | $ 1.5603 |
| 10+ | $1.3384 | $ 13.3840 |
| 30+ | $1.2159 | $ 36.4770 |
| 100+ | $1.0793 | $ 107.9300 |
| 500+ | $1.0189 | $ 509.4500 |
| 1000+ | $0.9905 | $ 990.5000 |
| 2000+ | $0.9798 | $ 1959.6000 |
| 4000+ | $0.9728 | $ 3891.2000 |
