| Manufacturer | |
| Mfr. Part # | STH3N150-2 |
| EBEE Part # | E8221471 |
| Package | H2PAK-2 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 1.5kV 2.5A 63W 9Ω@10V,1.3A 4V@250uA 1 N-channel H2PAK-2 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.8159 | $ 1.8159 |
| 10+ | $1.5138 | $ 15.1380 |
| 30+ | $1.3467 | $ 40.4010 |
| 100+ | $1.1587 | $ 115.8700 |
| 500+ | $1.0751 | $ 537.5500 |
| 1000+ | $1.0381 | $ 1038.1000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STH3N150-2 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 9Ω@10V | |
| Operating Temperature - | -50℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 13.2pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 140W | |
| Drain to Source Voltage | 1.5kV | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Current - Continuous Drain(Id) | 2.5A | |
| Ciss-Input Capacitance | 939pF | |
| Gate Charge(Qg) | 29.3nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.8159 | $ 1.8159 |
| 10+ | $1.5138 | $ 15.1380 |
| 30+ | $1.3467 | $ 40.4010 |
| 100+ | $1.1587 | $ 115.8700 |
| 500+ | $1.0751 | $ 537.5500 |
| 1000+ | $1.0381 | $ 1038.1000 |
