| Manufacturer | |
| Mfr. Part # | STH30N65DM6-7AG |
| EBEE Part # | E83288433 |
| Package | H2PAK-7 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 28A 115mΩ@10V,10A 223W 4.75V@250uA 1 N-channel H2PAK-7 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $10.3444 | $ 10.3444 |
| 10+ | $9.9104 | $ 99.1040 |
| 30+ | $9.6454 | $ 289.3620 |
| 100+ | $9.4238 | $ 942.3800 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STH30N65DM6-7AG | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 115mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.5pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 223W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4.75V | |
| Current - Continuous Drain(Id) | 28A | |
| Ciss-Input Capacitance | 2nF | |
| Output Capacitance(Coss) | 130pF | |
| Gate Charge(Qg) | 46nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $10.3444 | $ 10.3444 |
| 10+ | $9.9104 | $ 99.1040 |
| 30+ | $9.6454 | $ 289.3620 |
| 100+ | $9.4238 | $ 942.3800 |
