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STMicroelectronics STH30N65DM6-7AG


Manufacturer
Mfr. Part #
STH30N65DM6-7AG
EBEE Part #
E83288433
Package
H2PAK-7
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
650V 28A 115mΩ@10V,10A 223W 4.75V@250uA 1 N-channel H2PAK-7 MOSFETs ROHS
This materials supports customized cables!
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5 In Stock for Fast Shipping
5 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$10.3444$ 10.3444
10+$9.9104$ 99.1040
30+$9.6454$ 289.3620
100+$9.4238$ 942.3800
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TypeDescription
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CategoryDiscrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs
DatasheetST STH30N65DM6-7AG
RoHS
TypeN-Channel
RDS(on)115mΩ@10V
Operating Temperature --55℃~+150℃
Reverse Transfer Capacitance (Crss@Vds)1.5pF
Number1 N-channel
Pd - Power Dissipation223W
Drain to Source Voltage650V
Gate Threshold Voltage (Vgs(th))4.75V
Current - Continuous Drain(Id)28A
Ciss-Input Capacitance2nF
Output Capacitance(Coss)130pF
Gate Charge(Qg)46nC@10V

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