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STMicroelectronics STGD4M65DF2


Manufacturer
Mfr. Part #
STGD4M65DF2
EBEE Part #
E8222118
Package
DPAK
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
68W 8A 650V FS(Field Stop) TO-252-2(DPAK) IGBT Transistors / Modules ROHS
This materials supports customized cables!
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701 In Stock for Fast Shipping
701 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$0.3117$ 0.3117
10+$0.2835$ 2.8350
30+$0.2683$ 8.0490
100+$0.2507$ 25.0700
500+$0.2425$ 121.2500
1000+$0.2390$ 239.0000
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TypeDescription
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CategoryTransistors/Thyristors ,IGBT Transistors / Modules
DatasheetSTMicroelectronics STGD4M65DF2
RoHS
Operating Temperature-55℃~+175℃@(Tj)
Collector-Emitter Breakdown Voltage (Vces)650V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@250uA
Pd - Power Dissipation68W
IGBT TypeFS (Field Stop)
Gate Charge(Qg)15.2nC
Td(off)86ns
Td(on)12ns
Reverse Transfer Capacitance (Cres)8pF
Reverse Recovery Time(trr)133ns
Switching Energy(Eoff)136uJ
Turn-On Energy (Eon)40uJ
Input Capacitance(Cies)369pF
Pulsed Current- Forward(Ifm)16A
Output Capacitance(Coes)24.8pF

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