| Manufacturer | |
| Mfr. Part # | STD8N80K5 |
| EBEE Part # | E8165934 |
| Package | TO-252-2(DPAK) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 800V 6A 110W 950mΩ@10V,3A 5V@100uA 1 N-channel TO-252-2(DPAK) MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.6376 | $ 2.6376 |
| 10+ | $2.2952 | $ 22.9520 |
| 30+ | $2.0804 | $ 62.4120 |
| 100+ | $1.8602 | $ 186.0200 |
| 500+ | $1.7609 | $ 880.4500 |
| 1000+ | $1.7165 | $ 1716.5000 |
| 2500+ | $1.6969 | $ 4242.2500 |
| 5000+ | $1.6828 | $ 8414.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STD8N80K5 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 800V | |
| Continuous Drain Current (Id) | 6A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 950mΩ@10V,3A | |
| Power Dissipation (Pd) | 110W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 5V@100uA | |
| Input Capacitance (Ciss@Vds) | 450pF@100V | |
| Total Gate Charge (Qg@Vgs) | 16.5nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.6376 | $ 2.6376 |
| 10+ | $2.2952 | $ 22.9520 |
| 30+ | $2.0804 | $ 62.4120 |
| 100+ | $1.8602 | $ 186.0200 |
| 500+ | $1.7609 | $ 880.4500 |
| 1000+ | $1.7165 | $ 1716.5000 |
| 2500+ | $1.6969 | $ 4242.2500 |
| 5000+ | $1.6828 | $ 8414.0000 |
