| Manufacturer | |
| Mfr. Part # | STD65N160M9 |
| EBEE Part # | E85268775 |
| Package | DPAK |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 20A 106W 132mΩ@10V,10A 3.2V@250uA 1 N-channel DPAK MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.3462 | $ 4.3462 |
| 200+ | $1.6830 | $ 336.6000 |
| 500+ | $1.6228 | $ 811.4000 |
| 1000+ | $1.5936 | $ 1593.6000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STD65N160M9 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 650V | |
| Continuous Drain Current (Id) | 20A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 132mΩ@10V,10A | |
| Power Dissipation (Pd) | 106W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.2V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF@400V | |
| Input Capacitance (Ciss@Vds) | 1240pF@400V | |
| Total Gate Charge (Qg@Vgs) | 32nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.3462 | $ 4.3462 |
| 200+ | $1.6830 | $ 336.6000 |
| 500+ | $1.6228 | $ 811.4000 |
| 1000+ | $1.5936 | $ 1593.6000 |
