| Manufacturer | |
| Mfr. Part # | STD16N60M6 |
| EBEE Part # | E83277926 |
| Package | DPAK(TO-252) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 600V 12A 110W 0.32Ω@10V,6A 3.25V@250uA 1 N-channel DPAK(TO-252) MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.7515 | $ 1.7515 |
| 200+ | $0.6779 | $ 135.5800 |
| 500+ | $0.6548 | $ 327.4000 |
| 1000+ | $0.6424 | $ 642.4000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STD16N60M6 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 600V | |
| Continuous Drain Current (Id) | 12A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.32Ω@10V,6A | |
| Power Dissipation (Pd) | 110W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.25V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF@10V | |
| Input Capacitance (Ciss@Vds) | 575pF@10V | |
| Total Gate Charge (Qg@Vgs) | 16.7nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.7515 | $ 1.7515 |
| 200+ | $0.6779 | $ 135.5800 |
| 500+ | $0.6548 | $ 327.4000 |
| 1000+ | $0.6424 | $ 642.4000 |
