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STMicroelectronics STD12N60DM2AG
| Manufacturer | |
| Mfr. Part # | STD12N60DM2AG |
| EBEE Part # | E8495234 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 10A 430mΩ@10V,5A 110W 3V@250uA 1 N-channel TO-252 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.1797 | $ 2.1797 |
| 10+ | $1.8869 | $ 18.8690 |
| 30+ | $1.7041 | $ 51.1230 |
| 100+ | $1.5159 | $ 151.5900 |
| 500+ | $1.4307 | $ 715.3500 |
| 1000+ | $1.3952 | $ 1395.2000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STD12N60DM2AG | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 650V | |
| Continuous Drain Current (Id) | 10A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 430mΩ@10V,5A | |
| Power Dissipation (Pd) | 110W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.7pF@100V | |
| Input Capacitance (Ciss@Vds) | 614pF@100V | |
| Total Gate Charge (Qg@Vgs) | - |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.1797 | $ 2.1797 |
| 10+ | $1.8869 | $ 18.8690 |
| 30+ | $1.7041 | $ 51.1230 |
| 100+ | $1.5159 | $ 151.5900 |
| 500+ | $1.4307 | $ 715.3500 |
| 1000+ | $1.3952 | $ 1395.2000 |
