| Manufacturer | |
| Mfr. Part # | STD120N4F6 |
| EBEE Part # | E82970013 |
| Package | DPAK |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 40V 80A 110W 4mΩ@10V,40A 2V@250uA 1 N-channel DPAK MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7871 | $ 0.7871 |
| 10+ | $0.6474 | $ 6.4740 |
| 30+ | $0.5783 | $ 17.3490 |
| 100+ | $0.5092 | $ 50.9200 |
| 500+ | $0.4691 | $ 234.5500 |
| 1000+ | $0.4482 | $ 448.2000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STD120N4F6 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 4mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 350pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 110W | |
| Drain to Source Voltage | 40V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 80A | |
| Ciss-Input Capacitance | 3.85nF | |
| Output Capacitance(Coss) | 650pF | |
| Gate Charge(Qg) | 65nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7871 | $ 0.7871 |
| 10+ | $0.6474 | $ 6.4740 |
| 30+ | $0.5783 | $ 17.3490 |
| 100+ | $0.5092 | $ 50.9200 |
| 500+ | $0.4691 | $ 234.5500 |
| 1000+ | $0.4482 | $ 448.2000 |
