83% off
| Manufacturer | |
| Mfr. Part # | STD11N65M2 |
| EBEE Part # | E8500947 |
| Package | TO-252(DPAK) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 7A 670mΩ@10V,3.5A 85W 4V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.1792 | $ 0.1792 |
| 10+ | $0.1631 | $ 1.6310 |
| 30+ | $0.1542 | $ 4.6260 |
| 100+ | $0.1440 | $ 14.4000 |
| 500+ | $0.1397 | $ 69.8500 |
| 1000+ | $0.1375 | $ 137.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STD11N65M2 | |
| RoHS | ||
| RDS(on) | 670mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 85W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 7A | |
| Ciss-Input Capacitance | 410pF | |
| Gate Charge(Qg) | 12.5nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.1792 | $ 0.1792 |
| 10+ | $0.1631 | $ 1.6310 |
| 30+ | $0.1542 | $ 4.6260 |
| 100+ | $0.1440 | $ 14.4000 |
| 500+ | $0.1397 | $ 69.8500 |
| 1000+ | $0.1375 | $ 137.5000 |
