Recommonended For You
Images are for reference only
Add to Favourites
STMicroelectronics STD10N60M6
| Manufacturer | |
| Mfr. Part # | STD10N60M6 |
| EBEE Part # | E83277921 |
| Package | DPAK(TO-252) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 6.4A 520mΩ@10V,3.2A 60W 4.75V@250uA 1 N-channel DPAK(TO-252) MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.4143 | $ 1.4143 |
| 200+ | $0.5483 | $ 109.6600 |
| 500+ | $0.5289 | $ 264.4500 |
| 1000+ | $0.5199 | $ 519.9000 |
Recommended For You
Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STD10N60M6 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 650V | |
| Continuous Drain Current (Id) | 6.4A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 520mΩ@10V,3.2A | |
| Power Dissipation (Pd) | 60W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4.75V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.88pF@100V | |
| Input Capacitance (Ciss@Vds) | 338pF@100V | |
| Total Gate Charge (Qg@Vgs) | 8.8nC@010V |
Shopping Guide
Expand
In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.4143 | $ 1.4143 |
| 200+ | $0.5483 | $ 109.6600 |
| 500+ | $0.5289 | $ 264.4500 |
| 1000+ | $0.5199 | $ 519.9000 |
