| Manufacturer | |
| Mfr. Part # | STB80N20M5 |
| EBEE Part # | E82971202 |
| Package | D2PAK |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 200V 61A 190W 23mΩ@10V,30.5A 5V@250uA 1 N-channel D2PAK MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $6.2755 | $ 6.2755 |
| 10+ | $6.1287 | $ 61.2870 |
| 30+ | $6.0313 | $ 180.9390 |
| 100+ | $5.9340 | $ 593.4000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STB80N20M5 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 20mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 190W | |
| Drain to Source Voltage | 200V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 65A | |
| Ciss-Input Capacitance | 4.08nF | |
| Output Capacitance(Coss) | 290pF | |
| Gate Charge(Qg) | 108nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $6.2755 | $ 6.2755 |
| 10+ | $6.1287 | $ 61.2870 |
| 30+ | $6.0313 | $ 180.9390 |
| 100+ | $5.9340 | $ 593.4000 |
