Recommonended For You
Images are for reference only
Add to Favourites
STMicroelectronics STB36NM60ND
| Manufacturer | |
| Mfr. Part # | STB36NM60ND |
| EBEE Part # | E8472553 |
| Package | D2PAK |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 600V 29A 190W 0.097Ω@10V,14.5A 3V@250uA 1 N-channel D2PAK MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $6.9101 | $ 6.9101 |
| 10+ | $6.7664 | $ 67.6640 |
| 30+ | $6.6723 | $ 200.1690 |
| 100+ | $6.5764 | $ 657.6400 |
Recommended For You
Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STB36NM60ND | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Configuration | - | |
| Drain Source Voltage (Vdss) | 600V | |
| Continuous Drain Current (Id) | 29A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.097Ω@10V,14.5A | |
| Power Dissipation (Pd) | 190W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF@50V | |
| Input Capacitance (Ciss@Vds) | 2.785nF@50V | |
| Total Gate Charge (Qg@Vgs) | 80.4nC@10V |
Shopping Guide
Expand
In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $6.9101 | $ 6.9101 |
| 10+ | $6.7664 | $ 67.6640 |
| 30+ | $6.6723 | $ 200.1690 |
| 100+ | $6.5764 | $ 657.6400 |
