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STMicroelectronics STB36NM60N


Manufacturer
Mfr. Part #
STB36NM60N
EBEE Part #
E83288161
Package
D2PAK(TO-263)
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
600V 29A 0.105Ω@10V,14.5A 210W 4V@250uA 1 N-channel D2PAK(TO-263) MOSFETs ROHS
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Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$4.9117$ 4.9117
200+$1.9005$ 380.1000
500+$1.8348$ 917.4000
1000+$1.8011$ 1801.1000

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DatasheetST STB36NM60N
RoHS
Operating Temperature-40℃~+150℃
Type1 N-channel
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)29A
Drain Source On Resistance (RDS(on)@Vgs,Id)0.105Ω@10V,14.5A
Power Dissipation (Pd)210W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Reverse Transfer Capacitance (Crss@Vds)1.75pF
Input Capacitance (Ciss@Vds)2722pF
Total Gate Charge (Qg@Vgs)83.6nC

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