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STMicroelectronics STB35N65DM2
| Manufacturer | |
| Mfr. Part # | STB35N65DM2 |
| EBEE Part # | E85268669 |
| Package | D2PAK |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 32A 250W 0.093Ω@10V,16A 4V@250uA 1 N-channel D2PAK MOSFETs ROHS |
This materials supports customized cables!
Learn more >>26 In Stock for Fast Shipping
26 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.6150 | $ 3.6150 |
| 10+ | $3.0641 | $ 30.6410 |
| 30+ | $2.7360 | $ 82.0800 |
| 100+ | $2.4049 | $ 240.4900 |
| 500+ | $2.2517 | $ 1125.8500 |
| 1000+ | $2.1820 | $ 2182.0000 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STB35N65DM2 | |
| RoHS | ||
| RDS(on) | 93mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 250W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 32A | |
| Ciss-Input Capacitance | 2.54nF | |
| Gate Charge(Qg) | 56.3nC@520V |
Shopping Guide
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26 Stock for Shipping Fast
26 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.6150 | $ 3.6150 |
| 10+ | $3.0641 | $ 30.6410 |
| 30+ | $2.7360 | $ 82.0800 |
| 100+ | $2.4049 | $ 240.4900 |
| 500+ | $2.2517 | $ 1125.8500 |
| 1000+ | $2.1820 | $ 2182.0000 |
Best price for more quantity?
$
