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STMicroelectronics STB35N60DM2
| Manufacturer | |
| Mfr. Part # | STB35N60DM2 |
| EBEE Part # | E8472576 |
| Package | D2PAK |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 600V 28A 0.094Ω@10V,14A 210W 3V@250uA 1 N-channel D2PAK MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $6.1806 | $ 6.1806 |
| 10+ | $5.4954 | $ 54.9540 |
| 30+ | $5.0766 | $ 152.2980 |
| 100+ | $4.7251 | $ 472.5100 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STB35N60DM2 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Configuration | - | |
| Drain Source Voltage (Vdss) | 600V | |
| Continuous Drain Current (Id) | 28A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.094Ω@10V,14A | |
| Power Dissipation (Pd) | 210W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.8pF@100V | |
| Input Capacitance (Ciss@Vds) | 2.4nF@100V | |
| Total Gate Charge (Qg@Vgs) | 54nC@10V |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $6.1806 | $ 6.1806 |
| 10+ | $5.4954 | $ 54.9540 |
| 30+ | $5.0766 | $ 152.2980 |
| 100+ | $4.7251 | $ 472.5100 |
