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STMicroelectronics STB33N60M6
| Manufacturer | |
| Mfr. Part # | STB33N60M6 |
| EBEE Part # | E83277536 |
| Package | D2PAK(TO-263) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 600V 25A 105mΩ@10V,12.5A 190W 3.25V@250uA 1 N-channel D2PAK(TO-263) MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.1469 | $ 4.1469 |
| 200+ | $1.6059 | $ 321.1800 |
| 500+ | $1.5492 | $ 774.6000 |
| 1000+ | $1.5208 | $ 1520.8000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STB33N60M6 | |
| RoHS | ||
| Operating Temperature | -40℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 600V | |
| Continuous Drain Current (Id) | 25A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 105mΩ@10V,12.5A | |
| Power Dissipation (Pd) | 190W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.25V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.2pF@100V | |
| Input Capacitance (Ciss@Vds) | 1.515nF@100V | |
| Total Gate Charge (Qg@Vgs) | 33.4nC@10V |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.1469 | $ 4.1469 |
| 200+ | $1.6059 | $ 321.1800 |
| 500+ | $1.5492 | $ 774.6000 |
| 1000+ | $1.5208 | $ 1520.8000 |
