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STMicroelectronics STB33N60DM6
| Manufacturer | |
| Mfr. Part # | STB33N60DM6 |
| EBEE Part # | E83277533 |
| Package | D2PAK(TO-263) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 600V 25A 128mΩ@10V,12.5A 190W 4.75V@250uA 1 N-channel D2PAK(TO-263) MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
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Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.4982 | $ 4.4982 |
| 200+ | $1.7408 | $ 348.1600 |
| 500+ | $1.6804 | $ 840.2000 |
| 1000+ | $1.6503 | $ 1650.3000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STB33N60DM6 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 600V | |
| Continuous Drain Current (Id) | 25A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 128mΩ@10V,12.5A | |
| Power Dissipation (Pd) | 190W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4.75V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| Input Capacitance (Ciss@Vds) | 1.5nF@100V | |
| Total Gate Charge (Qg@Vgs) | 35nC |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.4982 | $ 4.4982 |
| 200+ | $1.7408 | $ 348.1600 |
| 500+ | $1.6804 | $ 840.2000 |
| 1000+ | $1.6503 | $ 1650.3000 |
