| Manufacturer | |
| Mfr. Part # | STB30NF20 |
| EBEE Part # | E8221448 |
| Package | TO-263-2 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 200V 30A 75mΩ@10V,15A 125W 4V@250uA 1 N-channel TO-263-2 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.6359 | $ 2.6359 |
| 10+ | $2.3058 | $ 23.0580 |
| 30+ | $2.0999 | $ 62.9970 |
| 100+ | $1.8886 | $ 188.8600 |
| 500+ | $1.7929 | $ 896.4500 |
| 1000+ | $1.7520 | $ 1752.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STB30NF20 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 200V | |
| Continuous Drain Current (Id) | 30A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 75mΩ@10V,15A | |
| Power Dissipation (Pd) | 125W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Input Capacitance (Ciss@Vds) | 1.597nF@25V | |
| Total Gate Charge (Qg@Vgs) | 38nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.6359 | $ 2.6359 |
| 10+ | $2.3058 | $ 23.0580 |
| 30+ | $2.0999 | $ 62.9970 |
| 100+ | $1.8886 | $ 188.8600 |
| 500+ | $1.7929 | $ 896.4500 |
| 1000+ | $1.7520 | $ 1752.0000 |
