| Manufacturer | |
| Mfr. Part # | STB30NF10T4 |
| EBEE Part # | E8140377 |
| Package | TO-263-2 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 35A 45mΩ@10V,15A 115W 4V@250uA 1 N-channel TO-263-2 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.1307 | $ 1.1307 |
| 10+ | $0.9532 | $ 9.5320 |
| 30+ | $0.8645 | $ 25.9350 |
| 100+ | $0.7775 | $ 77.7500 |
| 500+ | $0.7243 | $ 362.1500 |
| 1000+ | $0.6976 | $ 697.6000 |
| 2000+ | $0.6906 | $ 1381.2000 |
| 4000+ | $0.6852 | $ 2740.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STB30NF10T4 | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 100V | |
| Continuous Drain Current (Id) | 35A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 45mΩ@10V,15A | |
| Power Dissipation (Pd) | 115W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Input Capacitance (Ciss@Vds) | 1.18nF@25V | |
| Total Gate Charge (Qg@Vgs) | 55nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.1307 | $ 1.1307 |
| 10+ | $0.9532 | $ 9.5320 |
| 30+ | $0.8645 | $ 25.9350 |
| 100+ | $0.7775 | $ 77.7500 |
| 500+ | $0.7243 | $ 362.1500 |
| 1000+ | $0.6976 | $ 697.6000 |
| 2000+ | $0.6906 | $ 1381.2000 |
| 4000+ | $0.6852 | $ 2740.8000 |
