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STMicroelectronics STB30N65DM6AG
| Manufacturer | |
| Mfr. Part # | STB30N65DM6AG |
| EBEE Part # | E83288192 |
| Package | D2PAK(TO-263) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 28A 115mΩ@10V,10A 223W 4.75V@250uA 1 N-channel D2PAK(TO-263) MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.7796 | $ 4.7796 |
| 10+ | $4.6619 | $ 46.6190 |
| 30+ | $4.5819 | $ 137.4570 |
| 100+ | $4.5020 | $ 450.2000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STB30N65DM6AG | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 115mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.5pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 223W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4.75V | |
| Current - Continuous Drain(Id) | 28A | |
| Ciss-Input Capacitance | 2nF | |
| Gate Charge(Qg) | 46nC@10V |
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.7796 | $ 4.7796 |
| 10+ | $4.6619 | $ 46.6190 |
| 30+ | $4.5819 | $ 137.4570 |
| 100+ | $4.5020 | $ 450.2000 |
