| Manufacturer | |
| Mfr. Part # | STB26N60M2 |
| EBEE Part # | E82971192 |
| Package | D2PAK |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 20A 169W 0.14Ω@10V,10A 2V@250uA 1 N-channel D2PAK MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.8895 | $ 3.8895 |
| 10+ | $3.8062 | $ 38.0620 |
| 30+ | $3.7512 | $ 112.5360 |
| 100+ | $3.3750 | $ 337.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STB26N60M2 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 650V | |
| Continuous Drain Current (Id) | 20A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.14Ω@10V,10A | |
| Power Dissipation (Pd) | 169W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 124pF @ 0 to 480V | |
| Input Capacitance (Ciss@Vds) | 1.36nF@100V | |
| Total Gate Charge (Qg@Vgs) | 60nC@480V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.8895 | $ 3.8895 |
| 10+ | $3.8062 | $ 38.0620 |
| 30+ | $3.7512 | $ 112.5360 |
| 100+ | $3.3750 | $ 337.5000 |
