| Manufacturer | |
| Mfr. Part # | STB24N60DM2 |
| EBEE Part # | E82969962 |
| Package | D2PAK |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 600V 18A 200mΩ@10V,9A 150W 5V@250uA 1 N-channel D2PAK MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.5252 | $ 3.5252 |
| 10+ | $2.9924 | $ 29.9240 |
| 30+ | $2.6749 | $ 80.2470 |
| 100+ | $2.3543 | $ 235.4300 |
| 500+ | $2.2071 | $ 1103.5500 |
| 1000+ | $2.1405 | $ 2140.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STB24N60DM2 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 200mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.4pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 150W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Current - Continuous Drain(Id) | 18A | |
| Ciss-Input Capacitance | 1.055nF | |
| Output Capacitance(Coss) | 56pF | |
| Gate Charge(Qg) | 29nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.5252 | $ 3.5252 |
| 10+ | $2.9924 | $ 29.9240 |
| 30+ | $2.6749 | $ 80.2470 |
| 100+ | $2.3543 | $ 235.4300 |
| 500+ | $2.2071 | $ 1103.5500 |
| 1000+ | $2.1405 | $ 2140.5000 |
