| Manufacturer | |
| Mfr. Part # | STB20NM60T4 |
| EBEE Part # | E8500936 |
| Package | D2PAK |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 600V 20A 0.29Ω@10V,20A 192W 4V@250uA 1 N-channel D2PAK MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.0271 | $ 2.0271 |
| 10+ | $1.9844 | $ 19.8440 |
| 30+ | $1.9543 | $ 58.6290 |
| 100+ | $1.9242 | $ 192.4200 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STB20NM60T4 | |
| RoHS | ||
| Operating Temperature | -65℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 600V | |
| Continuous Drain Current (Id) | 20A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.29Ω@10V,20A | |
| Power Dissipation (Pd) | 192W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF@25V | |
| Input Capacitance (Ciss@Vds) | 1.5nF@25V | |
| Total Gate Charge (Qg@Vgs) | 54nC@480V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.0271 | $ 2.0271 |
| 10+ | $1.9844 | $ 19.8440 |
| 30+ | $1.9543 | $ 58.6290 |
| 100+ | $1.9242 | $ 192.4200 |
