| Manufacturer | |
| Mfr. Part # | STB20N65M5 |
| EBEE Part # | E8495232 |
| Package | D2PAK |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 18A 0.16Ω@10V,9A 130W 3V@250uA 1 N-channel D2PAK MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.9662 | $ 3.9662 |
| 200+ | $1.5347 | $ 306.9400 |
| 500+ | $1.4804 | $ 740.2000 |
| 1000+ | $1.4550 | $ 1455.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STB20N65M5 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 650V | |
| Continuous Drain Current (Id) | 18A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.16Ω@10V,9A | |
| Power Dissipation (Pd) | 130W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.7pF@100V | |
| Input Capacitance (Ciss@Vds) | 1.434nF@100V | |
| Total Gate Charge (Qg@Vgs) | 36nC@520V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.9662 | $ 3.9662 |
| 200+ | $1.5347 | $ 306.9400 |
| 500+ | $1.4804 | $ 740.2000 |
| 1000+ | $1.4550 | $ 1455.0000 |
