| Manufacturer | |
| Mfr. Part # | STB18NF25 |
| EBEE Part # | E8155570 |
| Package | TO-263-2 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 250V 17A 110W 165mΩ@10V,8.5A 4V@250uA 1 N-channel TO-263-2 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.0875 | $ 2.0875 |
| 10+ | $1.8265 | $ 18.2650 |
| 30+ | $1.6632 | $ 49.8960 |
| 100+ | $1.4964 | $ 149.6400 |
| 500+ | $1.4200 | $ 710.0000 |
| 1000+ | $1.3881 | $ 1388.1000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STB18NF25 | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 250V | |
| Continuous Drain Current (Id) | 17A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 165mΩ@10V,8.5A | |
| Power Dissipation (Pd) | 110W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Input Capacitance (Ciss@Vds) | 1nF@25V | |
| Total Gate Charge (Qg@Vgs) | 29.5nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.0875 | $ 2.0875 |
| 10+ | $1.8265 | $ 18.2650 |
| 30+ | $1.6632 | $ 49.8960 |
| 100+ | $1.4964 | $ 149.6400 |
| 500+ | $1.4200 | $ 710.0000 |
| 1000+ | $1.3881 | $ 1388.1000 |
