| Manufacturer | |
| Mfr. Part # | STB18N65M5 |
| EBEE Part # | E82971036 |
| Package | D2PAK |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 710V 15A 0.22Ω@10V,7.5A 110W 3V@250uA 1 N-channel D2PAK MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.7211 | $ 4.7211 |
| 200+ | $1.8274 | $ 365.4800 |
| 500+ | $1.7626 | $ 881.3000 |
| 1000+ | $1.7320 | $ 1732.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STB18N65M5 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 710V | |
| Continuous Drain Current (Id) | 15A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.22Ω@10V,7.5A | |
| Power Dissipation (Pd) | 110W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.2pF | |
| Input Capacitance (Ciss@Vds) | 1.24nF@100V | |
| Total Gate Charge (Qg@Vgs) | 31nC |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.7211 | $ 4.7211 |
| 200+ | $1.8274 | $ 365.4800 |
| 500+ | $1.7626 | $ 881.3000 |
| 1000+ | $1.7320 | $ 1732.0000 |
