| Manufacturer | |
| Mfr. Part # | STB180N55F3 |
| EBEE Part # | E86829553 |
| Package | D2PAK |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 55V 120A 330W 3.5mΩ@10V,60A 4V@250uA 1 N-channel D2PAK MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $9.6106 | $ 9.6106 |
| 200+ | $3.8351 | $ 767.0200 |
| 500+ | $3.7074 | $ 1853.7000 |
| 1000+ | $3.6434 | $ 3643.4000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STB180N55F3 | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 55V | |
| Continuous Drain Current (Id) | 120A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 3.5mΩ@10V,60A | |
| Power Dissipation (Pd) | 330W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Input Capacitance (Ciss@Vds) | 6.8nF@15V | |
| Total Gate Charge (Qg@Vgs) | 100nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $9.6106 | $ 9.6106 |
| 200+ | $3.8351 | $ 767.0200 |
| 500+ | $3.7074 | $ 1853.7000 |
| 1000+ | $3.6434 | $ 3643.4000 |
