| Manufacturer | |
| Mfr. Part # | STB15N65M5 |
| EBEE Part # | E8500931 |
| Package | D2PAK |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 11A 308mΩ@10V,5.5A 85W 4V@250uA 1 N-channel D2PAK MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.3000 | $ 0.3000 |
| 10+ | $0.2947 | $ 2.9470 |
| 30+ | $0.2893 | $ 8.6790 |
| 100+ | $0.2858 | $ 28.5800 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STB15N65M5 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 650V | |
| Continuous Drain Current (Id) | 11A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 308mΩ@10V,5.5A | |
| Power Dissipation (Pd) | 85W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.6pF@100V | |
| Input Capacitance (Ciss@Vds) | 816pF@100V | |
| Total Gate Charge (Qg@Vgs) | - |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.3000 | $ 0.3000 |
| 10+ | $0.2947 | $ 2.9470 |
| 30+ | $0.2893 | $ 8.6790 |
| 100+ | $0.2858 | $ 28.5800 |
