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STMicroelectronics STB13N60M2
| Manufacturer | |
| Mfr. Part # | STB13N60M2 |
| EBEE Part # | E8165926 |
| Package | D2PAK |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 11A 110W 0.38Ω@10V,5.5A 2V@250uA 1 N-channel TO-263-2 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>118 In Stock for Fast Shipping
118 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.0382 | $ 2.0382 |
| 10+ | $1.7422 | $ 17.4220 |
| 30+ | $1.5569 | $ 46.7070 |
| 100+ | $1.3668 | $ 136.6800 |
| 500+ | $1.2802 | $ 640.1000 |
| 1000+ | $1.2441 | $ 1244.1000 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STB13N60M2 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 380mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.1pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 110W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 11A | |
| Ciss-Input Capacitance | 580pF | |
| Output Capacitance(Coss) | 32pF | |
| Gate Charge(Qg) | 17nC@10V |
Shopping Guide
Expand
118 Stock for Shipping Fast
118 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.0382 | $ 2.0382 |
| 10+ | $1.7422 | $ 17.4220 |
| 30+ | $1.5569 | $ 46.7070 |
| 100+ | $1.3668 | $ 136.6800 |
| 500+ | $1.2802 | $ 640.1000 |
| 1000+ | $1.2441 | $ 1244.1000 |
Best price for more quantity?
$
