| Manufacturer | |
| Mfr. Part # | STB10LN80K5 |
| EBEE Part # | E8457512 |
| Package | D2PAK |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 800V 8A 630mΩ@10V,4A 110W 3V@100uA 1 N-channel D2PAK MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $13.7313 | $ 13.7313 |
| 10+ | $13.3675 | $ 133.6750 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STB10LN80K5 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 800V | |
| Continuous Drain Current (Id) | 8A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 630mΩ@10V,4A | |
| Power Dissipation (Pd) | 110W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@100uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.25pF | |
| Input Capacitance (Ciss@Vds) | 427pF@100V | |
| Total Gate Charge (Qg@Vgs) | 15nC@640V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $13.7313 | $ 13.7313 |
| 10+ | $13.3675 | $ 133.6750 |
