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STMicroelectronics SH32N65DM6AG
| Manufacturer | |
| Mfr. Part # | SH32N65DM6AG |
| EBEE Part # | E85268689 |
| Package | - |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 32A 208W 89mΩ@10V,23A 3.25V@250uA MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $52.5171 | $ 52.5171 |
| 200+ | $20.3235 | $ 4064.7000 |
| 500+ | $19.6097 | $ 9804.8500 |
| 1000+ | $19.2574 | $ 19257.4000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,FET, MOSFET Arrays | |
| Datasheet | ST SH32N65DM6AG | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Configuration | Half Bridge | |
| Drain Source Voltage (Vdss) | 650V | |
| Continuous Drain Current (Id) | 32A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 89mΩ@10V,23A | |
| Power Dissipation (Pd) | 208W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.25V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.3pF | |
| Input Capacitance (Ciss@Vds) | 2211pF | |
| Total Gate Charge (Qg@Vgs) | 47nC@10V |
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $52.5171 | $ 52.5171 |
| 200+ | $20.3235 | $ 4064.7000 |
| 500+ | $19.6097 | $ 9804.8500 |
| 1000+ | $19.2574 | $ 19257.4000 |
