| Manufacturer | |
| Mfr. Part # | 2N5884 |
| EBEE Part # | E85503645 |
| Package | TO-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 80V 200W 35@3A,4V 25A PNP TO-3 Bipolar (BJT) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $22.8280 | $ 22.8280 |
| 200+ | $9.1086 | $ 1821.7200 |
| 500+ | $8.8053 | $ 4402.6500 |
| 1000+ | $8.6538 | $ 8653.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,Bipolar (BJT) ,Single Bipolar Transistors | |
| Datasheet | Solid State System 2N5884 | |
| RoHS | ||
| Operating Temperature | -65℃~+200℃@(Tj) | |
| Collector Current (Ic) | 25A | |
| Power Dissipation (Pd) | 200W | |
| Collector Cut-Off Current (Icbo) | 2mA | |
| Collector-Emitter Breakdown Voltage (Vceo) | 80V | |
| DC Current Gain (hFE@Ic,Vce) | 35@3A,4V | |
| Transition Frequency (fT) | 4MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | [email protected],25A | |
| Transistor type | PNP |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $22.8280 | $ 22.8280 |
| 200+ | $9.1086 | $ 1821.7200 |
| 500+ | $8.8053 | $ 4402.6500 |
| 1000+ | $8.6538 | $ 8653.8000 |
