| Manufacturer | |
| Mfr. Part # | SE3082G |
| EBEE Part # | E8238670 |
| Package | DFN-8(5.2x5.6) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 30V 80A 3.1W 7.5mΩ@10V,25A 3V@250uA 2 N-Channel DFN-8(5.2x5.6) MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.3663 | $ 1.8315 |
| 50+ | $0.2899 | $ 14.4950 |
| 150+ | $0.2571 | $ 38.5650 |
| 500+ | $0.2162 | $ 108.1000 |
| 2500+ | $0.1707 | $ 426.7500 |
| 5000+ | $0.1598 | $ 799.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | SINO-IC SE3082G | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 7.5mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 230pF | |
| Number | 2 N-Channel | |
| Pd - Power Dissipation | 3.1W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 80A | |
| Ciss-Input Capacitance | 2.33nF | |
| Gate Charge(Qg) | 51nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.3663 | $ 1.8315 |
| 50+ | $0.2899 | $ 14.4950 |
| 150+ | $0.2571 | $ 38.5650 |
| 500+ | $0.2162 | $ 108.1000 |
| 2500+ | $0.1707 | $ 426.7500 |
| 5000+ | $0.1598 | $ 799.0000 |
