| Manufacturer | |
| Mfr. Part # | SE2N60B |
| EBEE Part # | E82920978 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | None |
| Description | 600V 2A 3.4Ω@10V,1A 33W 2.5V@250uA TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2006 | $ 1.0030 |
| 50+ | $0.1779 | $ 8.8950 |
| 150+ | $0.1682 | $ 25.2300 |
| 500+ | $0.1561 | $ 78.0500 |
| 2500+ | $0.1291 | $ 322.7500 |
| 5000+ | $0.1258 | $ 629.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | SINO-IC SE2N60B | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 4.3Ω@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 10.5pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 33W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Current - Continuous Drain(Id) | 2A | |
| Ciss-Input Capacitance | 520pF | |
| Output Capacitance(Coss) | 80pF | |
| Gate Charge(Qg) | 13.5nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2006 | $ 1.0030 |
| 50+ | $0.1779 | $ 8.8950 |
| 150+ | $0.1682 | $ 25.2300 |
| 500+ | $0.1561 | $ 78.0500 |
| 2500+ | $0.1291 | $ 322.7500 |
| 5000+ | $0.1258 | $ 629.0000 |
