| Manufacturer | |
| Mfr. Part # | SE10080A |
| EBEE Part # | E8393140 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 100V 80A 200W 9.9mΩ@10V,40A 3V@250uA 1 N-channel TO-220 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.3674 | $ 0.3674 |
| 10+ | $0.3586 | $ 3.5860 |
| 30+ | $0.3516 | $ 10.5480 |
| 100+ | $0.3232 | $ 32.3200 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | SINO-IC SE10080A | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 100V | |
| Continuous Drain Current (Id) | 80A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 9.9mΩ@10V,40A | |
| Power Dissipation (Pd) | 200W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| Input Capacitance (Ciss@Vds) | 4.8nF@50V | |
| Total Gate Charge (Qg@Vgs) | 85nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.3674 | $ 0.3674 |
| 10+ | $0.3586 | $ 3.5860 |
| 30+ | $0.3516 | $ 10.5480 |
| 100+ | $0.3232 | $ 32.3200 |
