| Manufacturer | |
| Mfr. Part # | SDM017G10DB |
| EBEE Part # | E829780690 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 100V 40A 21W 14mΩ@10V,10A 1.9V@250uA TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4240 | $ 0.4240 |
| 10+ | $0.3335 | $ 3.3350 |
| 30+ | $0.2942 | $ 8.8260 |
| 100+ | $0.2460 | $ 24.6000 |
| 500+ | $0.2233 | $ 111.6500 |
| 1000+ | $0.2113 | $ 211.3000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | SINEDEVICE SDM017G10DB | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 17mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.1pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 52W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Current - Continuous Drain(Id) | 40A | |
| Ciss-Input Capacitance | 769pF | |
| Output Capacitance(Coss) | 171pF | |
| Gate Charge(Qg) | 12.7nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4240 | $ 0.4240 |
| 10+ | $0.3335 | $ 3.3350 |
| 30+ | $0.2942 | $ 8.8260 |
| 100+ | $0.2460 | $ 24.6000 |
| 500+ | $0.2233 | $ 111.6500 |
| 1000+ | $0.2113 | $ 211.3000 |
