| Manufacturer | |
| Mfr. Part # | RU40191S-R |
| EBEE Part # | E82803363 |
| Package | TO-263 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 40V 190A 1.8mΩ@10V,75A 150W 2V@250uA 1 N-channel TO-263 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.0602 | $ 1.0602 |
| 10+ | $0.8796 | $ 8.7960 |
| 30+ | $0.7892 | $ 23.6760 |
| 100+ | $0.7008 | $ 70.0800 |
| 500+ | $0.6087 | $ 304.3500 |
| 800+ | $0.5816 | $ 465.2800 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | Shenzhen ruichips Semicon RU40191S-R | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 40V | |
| Continuous Drain Current (Id) | 190A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.8mΩ@10V,75A | |
| Power Dissipation (Pd) | 150W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 480pF@20V | |
| Input Capacitance (Ciss@Vds) | 4.8nF | |
| Total Gate Charge (Qg@Vgs) | 120nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.0602 | $ 1.0602 |
| 10+ | $0.8796 | $ 8.7960 |
| 30+ | $0.7892 | $ 23.6760 |
| 100+ | $0.7008 | $ 70.0800 |
| 500+ | $0.6087 | $ 304.3500 |
| 800+ | $0.5816 | $ 465.2800 |
