| Manufacturer | |
| Mfr. Part # | D7N65 |
| EBEE Part # | E82935479 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 650V 7A 32W 1.3Ω@10V,3.5A 4V@250uA TO-252-2 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2668 | $ 1.3340 |
| 50+ | $0.2086 | $ 10.4300 |
| 150+ | $0.1836 | $ 27.5400 |
| 500+ | $0.1524 | $ 76.2000 |
| 2500+ | $0.1386 | $ 346.5000 |
| 5000+ | $0.1303 | $ 651.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | Shandong Jingdao Microelectronics D7N65 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 1.3Ω@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 32W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 7A | |
| Ciss-Input Capacitance | 1.08nF | |
| Output Capacitance(Coss) | 90pF | |
| Gate Charge(Qg) | 22nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2668 | $ 1.3340 |
| 50+ | $0.2086 | $ 10.4300 |
| 150+ | $0.1836 | $ 27.5400 |
| 500+ | $0.1524 | $ 76.2000 |
| 2500+ | $0.1386 | $ 346.5000 |
| 5000+ | $0.1303 | $ 651.5000 |
