| Manufacturer | |
| Mfr. Part # | D4N65 |
| EBEE Part # | E82875695 |
| Package | TO-252-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 650V 4A 32W 2.6Ω@10V,2A 4V@250uA TO-252-3 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2363 | $ 1.1815 |
| 50+ | $0.1877 | $ 9.3850 |
| 150+ | $0.1669 | $ 25.0350 |
| 500+ | $0.1409 | $ 70.4500 |
| 2500+ | $0.1192 | $ 298.0000 |
| 5000+ | $0.1123 | $ 561.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | Shandong Jingdao Microelectronics D4N65 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 2.6Ω@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 32W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 560pF | |
| Output Capacitance(Coss) | 55pF | |
| Gate Charge(Qg) | 13nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2363 | $ 1.1815 |
| 50+ | $0.1877 | $ 9.3850 |
| 150+ | $0.1669 | $ 25.0350 |
| 500+ | $0.1409 | $ 70.4500 |
| 2500+ | $0.1192 | $ 298.0000 |
| 5000+ | $0.1123 | $ 561.5000 |
