| Manufacturer | |
| Mfr. Part # | D3R6N30 |
| EBEE Part # | E85156807 |
| Package | TO-252W |
| Customer # | |
| Datasheet | |
| EDA Models | |
| Description | 30V 80A 82W 3.6mΩ@10V,20A 2.5V@250uA TO-252W MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1277 | $ 0.6385 |
| 50+ | $0.1017 | $ 5.0850 |
| 150+ | $0.0886 | $ 13.2900 |
| 500+ | $0.0789 | $ 39.4500 |
| 2500+ | $0.0678 | $ 169.5000 |
| 5000+ | $0.0639 | $ 319.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | Shandong Jingdao Microelectronics D3R6N30 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 3.6mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 206pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 82W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 80A | |
| Ciss-Input Capacitance | 2.414nF | |
| Gate Charge(Qg) | 13nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1277 | $ 0.6385 |
| 50+ | $0.1017 | $ 5.0850 |
| 150+ | $0.0886 | $ 13.2900 |
| 500+ | $0.0789 | $ 39.4500 |
| 2500+ | $0.0678 | $ 169.5000 |
| 5000+ | $0.0639 | $ 319.5000 |
