| Manufacturer | |
| Mfr. Part # | GP2T080A120U |
| EBEE Part # | E86626988 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 1.2kV 35A 188W 100mΩ@20V,20A 2.8V@10mA 1 N-channel TO-247-3 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $19.7150 | $ 19.7150 |
| 210+ | $7.8672 | $ 1652.1120 |
| 510+ | $7.6040 | $ 3878.0400 |
| 990+ | $7.4751 | $ 7400.3490 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | SemiQ GP2T080A120U | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 1.2kV | |
| Continuous Drain Current (Id) | 35A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 100mΩ@20V,20A | |
| Power Dissipation (Pd) | 188W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.8V@10mA | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF@1000V | |
| Input Capacitance (Ciss@Vds) | 1.377nF@1000V | |
| Total Gate Charge (Qg@Vgs) | 58nC@20V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $19.7150 | $ 19.7150 |
| 210+ | $7.8672 | $ 1652.1120 |
| 510+ | $7.6040 | $ 3878.0400 |
| 990+ | $7.4751 | $ 7400.3490 |
