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SemiQ GP2T080A120H
| Manufacturer | |
| Mfr. Part # | GP2T080A120H |
| EBEE Part # | E85646621 |
| Package | TO-247-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 1.2kV 35A 188W 100mΩ@20V,20A 2.1V@10mA 1 N-channel TO-247-4 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $20.5661 | $ 20.5661 |
| 210+ | $8.2059 | $ 1723.2390 |
| 510+ | $7.9324 | $ 4045.5240 |
| 990+ | $7.7964 | $ 7718.4360 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | SemiQ GP2T080A120H | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 1.2kV | |
| Continuous Drain Current (Id) | 35A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 100mΩ@20V,20A | |
| Power Dissipation (Pd) | 188W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.1V@10mA | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF@1000V | |
| Input Capacitance (Ciss@Vds) | 1.377nF@1000V | |
| Total Gate Charge (Qg@Vgs) | 61nC@20V |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $20.5661 | $ 20.5661 |
| 210+ | $8.2059 | $ 1723.2390 |
| 510+ | $7.9324 | $ 4045.5240 |
| 990+ | $7.7964 | $ 7718.4360 |
