| Manufacturer | |
| Mfr. Part # | GP2T040A120H |
| EBEE Part # | E85646619 |
| Package | TO-247-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 1.2kV 63A 52mΩ@20V,40A 322W 1.8V@10mA 1 N-channel TO-247-4 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $43.0143 | $ 43.0143 |
| 210+ | $17.1628 | $ 3604.1880 |
| 510+ | $16.5896 | $ 8460.6960 |
| 990+ | $16.3072 | $ 16144.1280 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | SemiQ GP2T040A120H | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 1.2kV | |
| Continuous Drain Current (Id) | 63A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 52mΩ@20V,40A | |
| Power Dissipation (Pd) | 322W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.8V@10mA | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF@1000V | |
| Input Capacitance (Ciss@Vds) | 3.192nF@1000V | |
| Total Gate Charge (Qg@Vgs) | 118nC@20V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $43.0143 | $ 43.0143 |
| 210+ | $17.1628 | $ 3604.1880 |
| 510+ | $16.5896 | $ 8460.6960 |
| 990+ | $16.3072 | $ 16144.1280 |
