| Manufacturer | |
| Mfr. Part # | GCMS080B120S1-E1 |
| EBEE Part # | E86564311 |
| Package | SOT-227 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 1.2kV 30A 142W 100mΩ@20V,20A 2.8V@10mA 1 N-channel SOT-227 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $49.9392 | $ 49.9392 |
| 200+ | $19.9277 | $ 3985.5400 |
| 500+ | $19.2601 | $ 9630.0500 |
| 1000+ | $18.9325 | $ 18932.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | SemiQ GCMS080B120S1-E1 | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 1.2kV | |
| Continuous Drain Current (Id) | 30A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 100mΩ@20V,20A | |
| Power Dissipation (Pd) | 142W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.8V@10mA | |
| Input Capacitance (Ciss@Vds) | 1.374nF@1000V | |
| Total Gate Charge (Qg@Vgs) | 58nC@20V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $49.9392 | $ 49.9392 |
| 200+ | $19.9277 | $ 3985.5400 |
| 500+ | $19.2601 | $ 9630.0500 |
| 1000+ | $18.9325 | $ 18932.5000 |
