10% off
| Manufacturer | |
| Mfr. Part # | SW4N65 |
| EBEE Part # | E8381525 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 650V 4A 2.6Ω@10V,2A 23W 4.5V@250uA 1 N-channel TO-220 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2922 | $ 1.4610 |
| 50+ | $0.2294 | $ 11.4700 |
| 150+ | $0.2026 | $ 30.3900 |
| 500+ | $0.1690 | $ 84.5000 |
| 2000+ | $0.1541 | $ 308.2000 |
| 5000+ | $0.1451 | $ 725.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | Samwin SW4N65 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 2.6Ω@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 23W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 758pF | |
| Output Capacitance(Coss) | 69pF | |
| Gate Charge(Qg) | 18nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2922 | $ 1.4610 |
| 50+ | $0.2294 | $ 11.4700 |
| 150+ | $0.2026 | $ 30.3900 |
| 500+ | $0.1690 | $ 84.5000 |
| 2000+ | $0.1541 | $ 308.2000 |
| 5000+ | $0.1451 | $ 725.5000 |
