| Manufacturer | |
| Mfr. Part # | NP83P06PDG-E1-AY |
| EBEE Part # | E87321230 |
| Package | TO-263 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 60V 83A 8.8mΩ@10V,41.5A 2.5V@1mA 1 Piece P-Channel TO-263 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.2736 | $ 5.2736 |
| 200+ | $2.1053 | $ 421.0600 |
| 500+ | $2.0338 | $ 1016.9000 |
| 800+ | $1.9989 | $ 1599.1200 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | RENESAS NP83P06PDG-E1-AY | |
| RoHS | ||
| Operating Temperature | -40℃~+175℃ | |
| Type | 1 Piece P-Channel | |
| Drain Source Voltage (Vdss) | 60V | |
| Continuous Drain Current (Id) | 83A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 8.8mΩ@10V,41.5A | |
| Power Dissipation (Pd) | 1.8W;150W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@1mA | |
| Input Capacitance (Ciss@Vds) | 10.1nF@10V | |
| Total Gate Charge (Qg@Vgs) | 190nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.2736 | $ 5.2736 |
| 200+ | $2.1053 | $ 421.0600 |
| 500+ | $2.0338 | $ 1016.9000 |
| 800+ | $1.9989 | $ 1599.1200 |
