| Manufacturer | |
| Mfr. Part # | NP28N10SDE-E1-AY |
| EBEE Part # | E87321212 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 28A 52mΩ@10V,14A 2.5V@250uA 1 N-channel TO-252 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.2421 | $ 4.2421 |
| 200+ | $1.6940 | $ 338.8000 |
| 500+ | $1.6374 | $ 818.7000 |
| 1000+ | $1.6082 | $ 1608.2000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | RENESAS NP28N10SDE-E1-AY | |
| RoHS | ||
| Operating Temperature | -40℃~+175℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 100V | |
| Continuous Drain Current (Id) | 28A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 52mΩ@10V,14A | |
| Power Dissipation (Pd) | 1.2W;100W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA | |
| Input Capacitance (Ciss@Vds) | 3.3nF@25V | |
| Total Gate Charge (Qg@Vgs) | 75nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.2421 | $ 4.2421 |
| 200+ | $1.6940 | $ 338.8000 |
| 500+ | $1.6374 | $ 818.7000 |
| 1000+ | $1.6082 | $ 1608.2000 |
